Relation between distribution of states and the space-charge-region capacitance in semiconductors
- 1 October 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (7), 2603-2616
- https://doi.org/10.1063/1.335890
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Application of a new capacitance-voltage method to a-Si:HJournal of Non-Crystalline Solids, 1983
- A theory of the admittance of an amorphous silicon Schottky barrierPhilosophical Magazine Part B, 1983
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky BarriersJapanese Journal of Applied Physics, 1983
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- A theory of capacitance-voltage measurements on amorphous silicon Schottky barriersPhilosophical Magazine Part B, 1982
- Acceptor levels of high degeneracy in ZnO derived from combined space charge capacitance and hall effect dataJournal of Physics and Chemistry of Solids, 1981
- Determination of states distribution in hydrogenated amorphous silicon usingtunnel junctionsPhysical Review B, 1980
- Capacitance studies on amorphous silicon Schottky barrier diodesJournal of Non-Crystalline Solids, 1980
- The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriersPhilosophical Magazine Part B, 1979
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967