Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy
- 11 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (6), 968-970
- https://doi.org/10.1063/1.1450255
Abstract
We observed strong band edge luminescence at 8.5–200 K from 200–880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D0X(α-InN)] from α-InN grains, DAP (β-InN) and D0X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively.Keywords
This publication has 14 references indexed in Scilit:
- Growth of High-Electron-Mobility InN by RF Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2001
- Improvement on epitaxial grown of InN by migration enhanced epitaxyApplied Physics Letters, 2000
- Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculationsApplied Physics Letters, 2000
- Low-Temperature Growth of InN Films on (111)GaAs SubstratesJapanese Journal of Applied Physics, 1999
- Characterization of MOVPE-grown InN layers on α-Al2O3 and GaAs substratesJournal of Crystal Growth, 1998
- Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Structural properties of InN films grown on sapphire substrates by microwave-excited metalorganic vapor-phase epitaxyJournal of Applied Physics, 1994
- Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substratesJournal of Crystal Growth, 1994
- Infrared absorption in indium nitrideJournal of Applied Physics, 1986
- Optical band gap of indium nitrideJournal of Applied Physics, 1986