The role of leakge current on the memory window and memory retention in MFIS structure
- 1 March 1998
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 22 (1), 205-211
- https://doi.org/10.1080/10584589808208042
Abstract
Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure has been fabricated with Strontium Bismuth Tantalate (SBT) ferroelectric and Yttrium oxide as the buffer layer between ferroelectric and silicon. Capacitance versus voltage (C-V) analysis shows that memory window is found to be dependent on charge injection and charge retention in MFIS structure. Analysis of current versus voltage (I-V) characteristics show that the memory window and retention is strongly dependent on the leakage current in the MFIS structure.Keywords
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