Luminescence fatigue and optically detected magnetic resonance in amorphous silicon-hydrogen alloys
- 31 August 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (6), 439-442
- https://doi.org/10.1016/0038-1098(82)91163-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1982
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon: Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980