Spin-dependent and localisation effects at Si/SiO2device interfaces
- 1 December 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (12), 1045-1060
- https://doi.org/10.1088/0268-1242/4/12/008
Abstract
No abstract availableKeywords
This publication has 47 references indexed in Scilit:
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Observation of Spin-Dependent Thermal Emission from Deep Levels in SemiconductorsPhysical Review Letters, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- ESR studies of thermally oxidized silicon wafersSolid State Communications, 1981
- Optical enhancement of the electron paramagnetic resonance signal from SiIII centers at the Si/SiO2 interfaceJournal of Applied Physics, 1981
- Détection optique de la résonance magnétique de centres profonds dans les semiconducteursRevue de Physique Appliquée, 1980
- Avalanche Injection of Holes into SiO2IEEE Transactions on Nuclear Science, 1977
- Paramagnetic defects in silicon/silicon dioxide systemsSurface Science, 1976
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958