Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn
- 2 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4), 107-112
- https://doi.org/10.1016/0022-0248(91)90164-z
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Aperiodic stepwise growth model for the velocity and orientation dependence of solute trappingJournal of Materials Research, 1987
- Solute Trapping in Silicon by Lateral Motion of {111} LedgesPhysical Review Letters, 1986
- Solute Trapping: Comparison of Theory with ExperimentPhysical Review Letters, 1986
- Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiationJournal of Materials Research, 1986
- Effects of As impurities on the solidification velocity of Si during pulsed laser annealingApplied Physics Letters, 1985
- Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerationsApplied Physics Letters, 1985
- Relation Between Temperature and Solidification Velocity in Rapidly Cooled Liquid SiliconMRS Proceedings, 1984
- Solute trapping by rapid solidificationActa Metallurgica, 1969
- Stability of a Planar Interface During Solidification of a Dilute Binary AlloyJournal of Applied Physics, 1964
- The redistribution of solute atoms during the solidification of metalsActa Metallurgica, 1953