Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A), L414
- https://doi.org/10.1143/jjap.24.l414
Abstract
Growth-interrupted interfaces in Molecular Beam Epitaxy (MBE) have been characterized by C-V measurements and secondary ion mass spectroscopy. Carriers were depleted around the interfaces depending on interruption conditions such as the background vacuum and the interrupted period. For the depleted samples, carbon was detected at the interfaces. This carbon contaminant deteriorated crystal quality at the interface and caused carrier depletion. Using the MBE system combined with a maskless ion implanter in ultrahigh vacuum (UHV), a selectively Si-implanted GaAs multilayer structure was grown without interface degradation.Keywords
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