A search for interface states in an LPE GaAs/AlxGa1−xAs heterojunction
- 15 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (10), 683-684
- https://doi.org/10.1063/1.89503
Abstract
We have used the DLTS capacitance spectroscopy technique to search for interface states associated with an LPE GaAs/Al0.22Ga0.78As heterojunction. The results can be interpreted in terms of well‐known deep bulk states shifting abruptly at the interface with no observable interface states. The limiting values are 8 and 9 cm−2 interface states (deeper than 0.1 eV) in the upper and lower half of the gap, respectively.Keywords
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