p-n junction formation by Te+ ion implantation into solution-grown Pb1−xSnxTe
- 1 October 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (10), 4614-4615
- https://doi.org/10.1063/1.321418
Abstract
The ion implantation of Te+ is used to convert layers of n‐type Pb1−xSnxTe into p type. A Te+ ion concentration of greater than 1×1015 cm−2 and a suitable postanneal produce a p‐type layer about 1 μm thick on the surface of n‐type Pb1−xSnxTe.Keywords
This publication has 3 references indexed in Scilit:
- n-p junction ir detectors made by proton bombardment of epitaxial PbTeApplied Physics Letters, 1972
- Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardmentSolid-State Electronics, 1972
- p-n Junction Photodiodes in PbTe Prepared by Sb+ Ion ImplantationApplied Physics Letters, 1972