Drift of Arsenic in SiO2 in a Lamp Furnace With a Built-In Temperature Gradient
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Segregation and drift of arsenic in SiO2 under the influence of a temperature gradientApplied Physics Letters, 1987
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Diffusion of ion-implanted As in SiO2Journal of Applied Physics, 1984
- Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 FilmsJournal of the Electrochemical Society, 1984
- Modification of silicon properties with lasers, electron beams, and incoherent lightCritical Reviews in Solid State and Materials Sciences, 1984
- Photoeffect on SiAs ElectrodesJournal of the Electrochemical Society, 1983
- On the migration of helium bubblesRadiation Effects, 1983
- Anomalous Arsenic Diffusion in Silicon DioxideJournal of the Electrochemical Society, 1981
- Thermomigration of molten Ga in Si and GaAsJournal of Applied Physics, 1977
- Arsenic Diffusion in Silicon Using Low As[sub 2]O[sub 3]-Content Binary Arsenosilicate Glass SourcesJournal of the Electrochemical Society, 1972