The Si/SiO2 interface examined by cross-sectional transmission electron microscopy
- 15 January 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (2), 120-122
- https://doi.org/10.1063/1.89289
Abstract
Thin (200–300 Å) cross sections of Si/SiO2 have been examined by transmission electron microscopy at a resolution of better than 10 Å to search for crystalline Si protrusions into, or islands in, the thermally grown SiO2. Within the resolution obtained, no evidence was found for any phase separation within the amorphous oxide layer.Keywords
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