Plasma-assisted epitaxial growth of InAs
- 3 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (14), 1338-1340
- https://doi.org/10.1063/1.101354
Abstract
InAs layers were epitaxially grown directly on GaAs, InP, and GaSb at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. The electronic and crystallographic properties of PAE-InAs grown on substrates with different lattice mismatch were comparatively studied with a variable supply ratio As/In, growth temperature, and thickness of grown films. The electronic properties of PAE-InAs films comparable to those by molecular beam epitaxy (MBE) were obtained in a wide range of supply ratio, with less supply ratio, and at lower temperatures than MBE.Keywords
This publication has 6 references indexed in Scilit:
- The morphology and electrical properties of heteroepitaxial InAs prepared by MBEApplied Physics A, 1984
- Plasma-assisted epitaxial growth of GaAs and GaSb layers in hydrogen plasmaIEEE Transactions on Electron Devices, 1984
- Plasma-assisted epitaxial growth of GaSb in hydrogen plasmaApplied Physics Letters, 1984
- Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayersJournal of Physics D: Applied Physics, 1979
- Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam depositionApplied Physics Letters, 1978
- Molecular Beam Epitaxial Growth of InAsJapanese Journal of Applied Physics, 1977