Plasma-assisted epitaxial growth of GaSb in hydrogen plasma

Abstract

Plasma-assisted epitaxy (PAE) has been applied to grow GaSb films at substrate temperatures as low as 340 °C. A hydrogen plasma can reduce the density of residual impurities and/or defects. The hole concentration and Hall mobility of an undoped GaSb layer deposited in a hydrogen plasma at a substrate temperature of 410 °C on a GaAs (100) substrate are about 6×1016 cm−3 and 750 cm2/Vs, respectively, which are comparable to those obtained by other methods like molecular beam epitaxy, metalorganic chemical vapor deposition etc., in spite of a lower substrate temperature in PAE.