Internal stress compensation and scaling in ultrasensitive silicon pressure sensors
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4), 836-842
- https://doi.org/10.1109/16.127473
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Mechanical property measurements of thin films using load-deflection of composite rectangular membranePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A novel technique and structure for the measurement of intrinsic stress and Young's modulus of thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An ultrasensitive silicon pressure-based flowmeterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 1024-element high-performance silicon tactile imagerIEEE Transactions on Electron Devices, 1990
- Fabrication and Characterization of Si MembranesJournal of the Electrochemical Society, 1988
- Thermally excited silicon microactuatorsIEEE Transactions on Electron Devices, 1988
- Scaling limits in batch-fabricated silicon pressure sensorsIEEE Transactions on Electron Devices, 1987
- A high-yield IC-compatible multichannel recording arrayIEEE Transactions on Electron Devices, 1985
- Approximate Analysis of the Large Deflection Elastic Behaviour of Clamped, Uniformly Loaded, Rectangular PlatesJournal of Mechanical Engineering Science, 1969
- Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and GermaniumJournal of Applied Physics, 1965