High-temperature type-II superlattice diode laser at λ=2.9 μm
- 22 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (25), 3607-3609
- https://doi.org/10.1063/1.120455
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µmSemiconductors, 1997
- Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regionsApplied Physics Letters, 1997
- Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficienciesIEEE Journal of Selected Topics in Quantum Electronics, 1997
- InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor depositionIEEE Photonics Technology Letters, 1997
- Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor depositionApplied Physics Letters, 1997
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- High CW power (>200 mW/facet) at 3.4 [micro sign]m from InAsSb/InAlAsSb strained quantum well diode lasersElectronics Letters, 1996
- Type-II quantum-well lasers for the mid-wavelength infraredApplied Physics Letters, 1995
- Theoretical performance of InAs/ InxGa1−xSb superlattice-based midwave infrared lasersJournal of Applied Physics, 1994
- Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layersApplied Physics Letters, 1994