The effects of processing parameters on the microstructure and properties of sputter-deposited TiW thin film diffusion barriers
- 1 October 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 153 (1-3), 313-328
- https://doi.org/10.1016/0040-6090(87)90192-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Sputtered W–N diffusion barriersJournal of Vacuum Science & Technology A, 1985
- The use of titanium-based contact barrier layers in silicon technologyThin Solid Films, 1982
- General aspects of barrier layers for very-large-scale integration applications II: PracticeThin Solid Films, 1982
- Diffusion barriers between gold and semiconductorsGold Bulletin, 1982
- Resistivity of bias-sputtered TiW filmsThin Solid Films, 1979
- Studies of the Ti-W/Au metallization on aluminumThin Solid Films, 1978
- Diffusion barriers in thin filmsThin Solid Films, 1978
- Intermetallic formation in gold-aluminum systemsSolid-State Electronics, 1970