Polytypic transformations in SiC: the role of TEM
- 1 June 1993
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 51 (1-4), 189-214
- https://doi.org/10.1016/0304-3991(93)90146-o
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Interactions between shockley dislocations and perfect screw dislocations with large burgers vectors in high-temperature deformed α-sicPhilosophical Magazine A, 1992
- Stress-Induced Polytypic Transformation in SicMRS Proceedings, 1992
- Cross-slip and twinning in semiconductorsScripta Metallurgica et Materialia, 1991
- Anti-Site Bonds and the Structure of Interfaces in SiCMRS Proceedings, 1990
- Slip and twinning in high-stress-deformed GaAs and the influence of dopingPhilosophical Magazine A, 1989
- On twinning and polymorphic transformations in compound semiconductorsScripta Metallurgica, 1989
- Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopyPhilosophical Magazine A, 1988
- Deformation mode in silicon, slip or twinning?Scripta Metallurgica, 1987
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979
- Low-Temperature Solid-State Phase Transformations in 2H Silicon CarbideJournal of Applied Physics, 1972