Low-temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltelluride

Abstract

Epitaxial films of CdTe and HgTe have been grown by metalorganic chemical vapor deposition using a new tellurium source, ditertiarybutyltelluride. This compound is demonstrated to be less stable than presently available organotellurium compounds which permits film growth at lower substrate temperatures. Specular CdTe and HgTe films have been grown at temperatures as low as 220 and 230 °C, respectively. Hall measurements performed on the HgTe films indicate good transport properties. The reduced stability of ditertiarybutyltelluride compared to other alkyl organotellurium compounds is consistent with relative stability results for branched hydrocarbon molecules.