Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3), 718-723
- https://doi.org/10.1109/16.47777
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Thin-film, accumulation-mode p-channel SOI MOSFETsElectronics Letters, 1988
- CMOS circuits made in thin SIMOX filmsElectronics Letters, 1987
- A charge-based large-signal model for thin-film SOI MOSFET'sIEEE Transactions on Electron Devices, 1985
- Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode TransistorMRS Proceedings, 1985
- Current-voltage characteristics of thin-film SOI MOSFET's in strong inversionIEEE Transactions on Electron Devices, 1984