Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization
- 29 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (26), 1879-1881
- https://doi.org/10.1063/1.97673
Abstract
We have investigated reactively sputtered films of RuO2 for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10−9 dyn cm−2 range. The resistivity of as deposited films is 40 μΩ cm. The films are excellent barriers against interdiffusion of Si and Al.Keywords
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