Impurity (Si) concentration effects on radiation-induced deep traps in n-InP
- 15 June 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (12), 4444-4446
- https://doi.org/10.1063/1.333017
Abstract
Impurity concentration effects on radiation defects and minority carrier (hole) diffusion length in 1‐MeV electron irradiated n‐InP have been studied by deep level transient spectroscopy and the electron beam induced current method. Trap concentrations are found to markedly decrease with an increase in the Si‐impurity concentration. It is also indicated that Si‐impurity doping more than 1017 cm−3 of concentration shows a strong suppression effect on degradation in minority carrier diffusion length, caused by electron irradiation in n‐InP.Keywords
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