DC and RF performance of 0.1 mu m gate length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As pseudomorphic HEMTs
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 180-183
- https://doi.org/10.1109/iedm.1988.32784
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequenciesIEEE Electron Device Letters, 1988
- Advances in HEMT Technology and ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985