AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11), 610-612
- https://doi.org/10.1109/55.9292
Abstract
An AlGaAs/InGaAs/GaAs quantum-well MISFET developed for power operation at millimeter-wave frequencies is described. The InGaAs channel is heavily doped to increase the sheet carrier density, resulting in a maximum current density of 700 mA/mm with a transconductance of 480 mS/mm. The 0.25- mu m*50- mu m device delivers a power density of 0.76 W/mm with 3.6-dB gain and 19% power-added efficiency at 60 GHz. At 5.2 dB gain, the power density is 0.55 W/mm. A similar device built on an undoped InGaAs channel had much poorer power performance and no speed advantage.Keywords
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