Effect of temperature on data retention of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors
- 1 June 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (11), 7115-7124
- https://doi.org/10.1063/1.345062
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Retention Characteristics of SNOS Nonvolatile Devices in a Radiation EnvironmentIEEE Transactions on Nuclear Science, 1987
- Radiation Response of SNOS Nonvolatile TransistorsIEEE Transactions on Nuclear Science, 1986
- Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROMIEEE Transactions on Electron Devices, 1985
- A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structuresIEEE Transactions on Electron Devices, 1983
- A Radiation-Hardened 16K-BIT MNOS EAROMIEEE Transactions on Nuclear Science, 1983
- A Radiation Hardened Nonvolatile MNOS RAMIEEE Transactions on Nuclear Science, 1983
- The effect of electrical conduction of Si3N4on the discharge of MNOS memory transistorsIEEE Transactions on Electron Devices, 1978
- Ionizing Radiation Effects on the Sperry Rand Nonvolatile 256-Bit MNOS Ram Array (SR2256)IEEE Transactions on Nuclear Science, 1978
- Endurance and memory decay of MNOS devicesJournal of Applied Physics, 1976
- Discharge of MNOS structures at elevated temperaturesSolid-State Electronics, 1976