Investigation of the charge pumping current in metal-oxide-semiconductor structures

Abstract

A study of the charge pumping phenomena occurring in a metal-oxide-semiconductor structure is presented. This study, which is based on numerical simulations of charge pumping in the time domain, enables a good overall description of the charge pumping characteristics to be obtained. In particular, the influence of various charge pumping configurations is analyzed relative to gate voltage signal characteristics such as rise/fall times, low/high gate biases, pulse duration, and signal waveform, and to device parameters such as interface-state density, flat-band voltage, and threshold voltage. The numerical simulations are also compared to typical experimental charge pumping characteristics. The adequacy of analytical or simplified models generally used to exploit the charge pumping data is also discussed.