Ion-beam-induced crystallization and amorphization of silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 435-442
- https://doi.org/10.1016/s0168-583x(87)80086-1
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in siliconApplied Physics Letters, 1984
- Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphirePhysical Review B, 1984
- Ion-beam induced annealing of radiation damage in silicon on sapphireNuclear Instruments and Methods in Physics Research, 1983
- Novel low-temperature recrystallization of amorphous silicon by high-energy ion beamApplied Physics Letters, 1982
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- Production and beam annealing of damagein carbon implanted silicon. IIRadiation Effects, 1978
- Radiation damage in Ge produced and removed by energetic Ge ionsRadiation Effects, 1975
- Radiation enhanced annealing of radiation damage in GeRadiation Effects, 1975
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969
- Electron microscope investigation of damage structure in gallium-arsenide bombarded with neon ionsRadiation Effects, 1969