Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- DEFECTS IN LASER-PROCESSED SEMICONDUCTORSPublished by Elsevier ,1980
- The depth of defect annihilation in silicon by pulse laser annealing: Experiment and theoryApplied Physics Letters, 1979
- Depth of melting produced by pulsed-laser irradiationApplied Physics Letters, 1979
- Redistribution of dopants in ion-implanted silicon by pulsed-laser annealingApplied Physics Letters, 1978
- Epitaxial regrowth of evaporated amorphous silicon by a pulsed laser beamApplied Physics Letters, 1978
- Enhanced diffusion mechanismsRadiation Effects, 1978