Strained GaInAsP single-quantum-well lasers grown with tertiarybutylarsine and tertiarybutylphosphine
- 20 December 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (25), 3417-3419
- https://doi.org/10.1063/1.110158
Abstract
We report on low threshold current densities in GaInAsP single-quantum-well (SQW) lasers grown with the metalorganic column-V precursors, tertiarybutylarsine and tertiarybutylphosphine, instead of the conventional compressed gas sources, arsine and phosphine. Threshold current densities of 121 A/cm2 for a 1.6% compressive strained SQW laser and 249 A/cm2 for an unstrained SQW laser have been measured and are among the lowest values seen in this material system.Keywords
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