Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambients
- 30 November 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (11), 991-IN4
- https://doi.org/10.1016/0038-1101(75)90117-3
Abstract
No abstract availableKeywords
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