Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- 1 August 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (8A), L497
- https://doi.org/10.1143/jjap.21.l497
Abstract
It was found that fatigue in photoluminescence of hydrogenated amorphous silicon could be photo-annealed with infrared light. This photo-annealing effect supports the three state model of the fatigue which consists of initial, intermediate and final fatigued state. Different fatigue behavior at two different temperatures (77 K and 294 K) is also interpreted by the model.Keywords
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