EL2° Distribution in the Vicinity of Dislocations in GaAs-In Materials

Abstract

We have recently shown that, contrary to the well-reputed opinion, the EL2° centers in GaAs undoped materials are not especially concentrated on dislocations: the cell pattern, in particular, does not disappear after photoquenching at Liquid Nitrogen Temperature. In this paper we shall complete this study with details of the EL2° densities in the vicinity of individual dislocations in GaAs-In materials. Laser Scanning Tomography and Infra Red Transmission images will be analyzed complementarily. Grown-in axial dislocations appear to be surrounded by a wide EL2-rich cylindrical zone, whereas the dislocation itself is not to be considered as a large reservoir of gettered EL2 centers.