A Comment on Defects in GaAs Crystals Observed by Infrared Light Scattering Tomography and IR Absorption Microscopy
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A), L916
- https://doi.org/10.1143/jjap.25.l916
Abstract
Infrared light scattering and absorption due to electrons trapped by centers with a hydrogen-like structure are discussed and the following reported evidences are explained: (a) enhancement of IR scattering without clear change of IR absorption due to ingot annealing of GaAs crystals and (2) light scattering after bleaching of IR absorption in GaAs atlow temperature.Keywords
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