The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon
- 1 November 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (9), 582-585
- https://doi.org/10.1063/1.89787
Abstract
Depth profiles for hydrogen in amorphous silicon have been determined by the use of resonant nuclear reactions [1H(15N,αγ)12C and 1H(19F,αγ)16O] and by secondary ion mass spectroscopy (SIMS). Independent calibration procedures were used for the two techniques. Measurements were made on the same amorphous silicon film to provide a direct comparison of the two hydrogen analysis techniques. The hydrogen concentration in the bulk of the film was determined to be about 9 at.% H. The SIMS results agree with the resonant nuclear reaction results to within 10%, which demonstrates that quantitative hydrogen depth profiles can be obtained by SIMS analysis for materials such as amorphous silicon.Keywords
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