Field-assisted photoemission to 2.1 microns from a Ag/p-In0.77Ga0.23As photocathode
- 15 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8), 639-640
- https://doi.org/10.1063/1.91608
Abstract
Reflection‐mode photoemission to a 2.1‐μm threshold has been achieved from an externally biased Ag/p‐In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4‐V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor‐phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.Keywords
This publication has 10 references indexed in Scilit:
- Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode applicationApplied Physics Letters, 1979
- Hot-electron attenuation length in Ag/InP Schottky barriersJournal of Vacuum Science and Technology, 1979
- Field-assisted minority carrier electron transport across a p-InGaAs/p-InP heterojunctionJournal of Vacuum Science and Technology, 1978
- Transferred-electron photoemission to 1.65 μm from InGaAsJournal of Applied Physics, 1978
- Transferred electron photoemission to 1.65 μ from an InGaAsP heterojunction cathodeJournal of Applied Physics, 1978
- Transferred-electron photoemission to 1.4 μmApplied Physics Letters, 1976
- Interfacial lattice mismatch effects in III–V compoundsJournal of Crystal Growth, 1975
- Transferred electron photoemission from InPApplied Physics Letters, 1974
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972