Transferred electron photoemission to 1.65 μ from an InGaAsP heterojunction cathode
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (1), 447-449
- https://doi.org/10.1063/1.324356
Abstract
Photoemission to 1.65 μ from a field‐assisted heterojunction cathode has been achieved for the first time. The all‐LPE‐grown cathode consists of a p‐type InGaAs photon‐absorbing electron‐generating layer, lattice matched to a p‐type InGaAsP transferred‐electron photoelectron‐emitting layer. Reflection‐mode quantum yield of ∼0.1% at 1.55 μ has been measured at 125 K.Keywords
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