Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane
- 13 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (7), 658-659
- https://doi.org/10.1063/1.100910
Abstract
Selective epitaxial silicon layers have been grown in a reduced pressure (<2 Torr) reactor in the 650–1100 °C temperature range using only dichlorosilane (DCS) gas diluted in hydrogen. The growth rate plotted in Arrhenius coordinates (log G vs 1/T) shows an activation energy of 59 kcal/mol in the 650–800 °C range. A comparison is made between the DCS system and our previous results concerning the SiH4/HCl/H2 system.Keywords
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