One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (4), 727-737
- https://doi.org/10.1109/16.22478
Abstract
No abstract availableKeywords
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