Lattice defects in As-implanted and cw Nd:YAG laser-annealed silicon

Abstract

Lattice defects in As‐implanted and cw Nd:YAG laser‐annealed silicon have been studied. Observed defects are small point defect clusters at lower laser power which develop into dislocation loops at higher laser power. Further increase of laser power results in annihilation of the dislocation loop, but with generation of slip dislocations owing to large thermal stress. The mechanism of the dislocation loop annihilation is considered to be due to dislocation climb motion as in the case of usual thermal annealing.