Evidence for partial solid-state regrowth during pulsed-laser annealing

Abstract

Nonsecond pulsed‐laser annealing of semiconductors is widely believed to be a simple thermal melting and recrystallization effect. We have examined subthreshold‐irradiated arsenic‐implanted silicon wafers in cross section by conventional transmission and scanning transmission electron microscopy. Both microdiffraction and high‐resolution microscopical techniques were found to be very useful. There is evidence for both thermal melting and at a deeper level partial solid‐state regrowth. The origin of this nucleation is thought to be thermal but it may be influenced by ionization or stress effects.