Growth of epitaxial silicon layers by ion beam sputtering
- 1 November 1970
- journal article
- letter
- Published by Springer Nature in Journal of Materials Science
- Vol. 5 (11), 1016-1018
- https://doi.org/10.1007/bf00558187
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- A sputtering ion sourceNuclear Instruments and Methods, 1965
- Low-Pressure Sputtered Germanium FilmsJournal of Vacuum Science and Technology, 1965
- Deposition of Germanium Films by SputteringJournal of the Electrochemical Society, 1965
- Fibered and Epitaxial Growth in Sputtered Films of GaAsJournal of Applied Physics, 1964
- Sputtering Yields at Very Low Bombarding Ion EnergiesJournal of Applied Physics, 1962