X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A), L917
- https://doi.org/10.1143/jjap.24.l917
Abstract
The X-ray standing wave method was applied to the characterization of InGaAsP thin film epitaxially grown on an InP substrate. The yields of Ga Kα and As Kα fluorescent X-rays were measured around the Bragg angle of both 200 and 400 reflections. By comparing the profiles of the experimental yield curves with those of calculated ones, it was shown that the atomic sequence of Group III and Group V elements at the interface was an alternating one, as expected. The amount of lattice mismatch was also discussed.Keywords
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