Structural Analysis of the NiSi2/(111)Si Interface by the X-Ray Standing-Wave Method
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R)
- https://doi.org/10.1143/jjap.24.1425
Abstract
The atomic structure of the interface between an epitaxial NiSi2 film without a 180°-rotated twin-crystal region and an Si(111) substrate was investigated by the X-ray standing-wave method using synchrotron radiation. The angular yield of Ni Kα fluorescent X-rays was measured around the Bragg angle of both 111 and 111̄ reflections of the Si substrate. By fitting the profile of the experimental yield curves with that of the calculated ones, the atomic structure of the interface was determined and the lattice distortion of NiSi2 films investigated.Keywords
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