Quarter-micrometer gate ion-implanted GaAs MESFET's with an f/sub 1/ of 126 GHz
- 1 August 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (8), 386-388
- https://doi.org/10.1109/55.31765
Abstract
The fabrication and characterization of a 0.25- mu m-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f/sub t/ of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I/sub dss/ yields f/sub 1/'s of 108-126 GHz. It is projected that an f/sub 1/ of 320 GHz is achievable with 0.1- mu m-gate GaAs MESFETs. This demonstration of f/sub 1/'s over 100 GHz with practical 0.25- mu m gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs.Keywords
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