Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7), 824-830
- https://doi.org/10.1109/16.3332
Abstract
No abstract availableKeywords
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