Imprint induced failure modes in ferroelectric non-volatile memories
- 1 February 1997
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 15 (1), 29-38
- https://doi.org/10.1080/10584589708015694
Abstract
The development of a preferential state in FE capacitors due to prolonged storage in a particular memory state, i.e. “preferential aging induced imprint,” causes a significant vulnerability in FE non-volatile memories. Imprint due to repeated rewriting of the capacitor or by the application of a DC bias, i.e. “external bias induced imprint,” appears to be much more common in FE capacitors than preferential aging induced imprint, but may not pose as serious a problem from a reliability standpoint.Keywords
This publication has 9 references indexed in Scilit:
- Ionizing radiation-induced asymmetries of the retention characteristics of ferroelectric thin filmsIEEE Transactions on Nuclear Science, 1995
- Electrical properties of PZT thin films for memory applicationIntegrated Ferroelectrics, 1995
- The temperature dependence of ferroelectric imprintIntegrated Ferroelectrics, 1995
- The imprint mechanism in ferroelectric capacitorsIntegrated Ferroelectrics, 1995
- Retention and imprint properties of ferroelectric thin filmsPhysica Status Solidi (a), 1995
- Voltage shifts and imprint in ferroelectric capacitorsApplied Physics Letters, 1995
- A review of composition-structure-property relationships for PZT-based heterostructure capacitorsIntegrated Ferroelectrics, 1995
- Fatigue and retention of Pb(Zr0.53Ti0.47)O3 thin film capacitors with Pt and RuO2 electrodesIntegrated Ferroelectrics, 1994
- Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon via template growthApplied Physics Letters, 1993