Interfacial tunnel interaction in MOS elements in depletion
- 16 May 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 47 (1), 251-258
- https://doi.org/10.1002/pssa.2210470130
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Potentiel de surface et désordre interfacial dans un élément mosThin Solid Films, 1976
- Electron trapping at positively charged centers in SiO2Applied Physics Letters, 1975
- Charge and potential distribution in dielectric layers of MOS structures under ionizationPhysica Status Solidi (a), 1974
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO2InterfaceJapanese Journal of Applied Physics, 1973
- Apparatus for the automatic measurement and recording of the variations of the electrical characteristics of a metal insulator semiconductor structureJournal of Physics E: Scientific Instruments, 1972
- Properties and structure of vitreous silica. IJournal of Non-Crystalline Solids, 1970
- Apparent interface state density introduced by the spatial fluctuations of surface potential in an m.o.s. structureElectronics Letters, 1970
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Tunneling from an Independent-Particle Point of ViewPhysical Review B, 1961