MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films

Abstract

MoSe2 coatings were obtained by solid state reaction, induced by annealing, between the Mo and Se constituents in thin films form. The films have been investigated by X ray analysis, XPS analysis, scanning electron microscopy, electron microprobe analysis, optical absorption and electrical resistivity measurements. It was found that, while the films are stoichiometrics, MoSe2 in the hexagonal form was difficult to obtain even at temperature as high as 850 K. However thin films annealed under selenium pressure at only 770 K are well crystallized. The electrical resistivity is governed by hopping conduction in the low temperature range (80-200 K) and by grain boundary scattering mechanisms at higher temperature