Effect of index antiguiding on the far-field distribution of stripe-geometry lasers
- 15 September 1983
- journal article
- Published by Elsevier in Optics Communications
- Vol. 47 (4), 283-287
- https://doi.org/10.1016/0030-4018(83)90183-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- An analytic study of (GaAl)As gain guided lasers at thresholdIEEE Journal of Quantum Electronics, 1982
- Properties of MO-CVD-grown GaAs/GaAlAs lasers as a function of stripewidthIEEE Journal of Quantum Electronics, 1981
- Spectral dependence of the change in refractive index due to carrier injection in GaAs lasersJournal of Applied Physics, 1981
- Some relations for the far-field distribution of semiconductor lasers with gain-guidingOptical and Quantum Electronics, 1981
- Refractive index dependence on free carriers for GaAsJournal of Applied Physics, 1980
- The effect of device geometry on lateral mode content of stripe geometry lasersIEEE Journal of Quantum Electronics, 1979
- Lateral waveguiding in stripe-geometry double-heterostructure lasers below the lasing thresholdIEEE Journal of Quantum Electronics, 1979
- Lateral mode behavior in narrow stripe lasersIEEE Journal of Quantum Electronics, 1979
- Symmetrical and asymmetrical waveguiding in very narrow conducting stripe lasersIEEE Journal of Quantum Electronics, 1979
- Lasing Characteristics of Very Narrow Planar Stripe LasersJapanese Journal of Applied Physics, 1977