Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- 1 November 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (11B), L1362
- https://doi.org/10.1143/jjap.37.l1362
Abstract
Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10 ns to 1 ns as the doping level is increased from unintentionally doped to 5×1018 cm-3 (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110 meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.Keywords
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