The negative role of the fast electrons in the microwave oxidation of silicon
- 1 June 1978
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 28 (6), 639-643
- https://doi.org/10.1007/bf01596043
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Model of SiO2 film growth on Si in oxygen microwave dischargePhysica Status Solidi (a), 1976
- Charge Phenomena in dc Reactively Sputtered SiO2 FilmsJournal of Applied Physics, 1968
- Characteristics of Silicon Silicon-Dioxide Structures Formed by DC Reactive SputteringJapanese Journal of Applied Physics, 1968
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- The properties of plasma-grown SiO2 filmsSurface Science, 1967
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965